The IPD25N06S2-40 from Infineon Technologies is a MOSFET with Continous Drain Current 21 to 29 A, Drain Source Resistance 28.6 to 40 Mohms, Drain Source Breakdown Voltage 55 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.1 to 4 V. Tags: Through Hole. More details for IPD25N06S2-40 can be seen below.