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IPD30N03S2L-10

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IPD30N03S2L-10 Image

The IPD30N03S2L-10 from Infineon Technologies is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 8.3 to 14.6 Mohms, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Through Hole. More details for IPD30N03S2L-10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD30N03S2L-10
  • Manufacturer
    Infineon Technologies
  • Description
    20-40 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    8.3 to 14.6 Mohms
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    31 to 42 nC
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-11
  • Applications
    Automotive

Technical Documents
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