1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IPD30N06S2-23

IPD30N06S2-23

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IPD30N06S2-23 Image

The IPD30N06S2-23 from Infineon Technologies is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 17 to 23 Mohms, Drain Source Breakdown Voltage 55 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.1 to 4 V. Tags: Through Hole. More details for IPD30N06S2-23 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPD30N06S2-23
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    17 to 23 Mohms
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.1 to 4 V
  • Gate Charge
    25 to 32 nC
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-11
  • Applications
    Automotive

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products