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IPD50N06S2L-13

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IPD50N06S2L-13 Image

The IPD50N06S2L-13 from Infineon Technologies is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 10.2 to 16.7 Mohms, Drain Source Breakdown Voltage 55 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Through Hole. More details for IPD50N06S2L-13 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD50N06S2L-13
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    10.2 to 16.7 Mohms
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    54 to 69 nC
  • Power Dissipation
    136 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-11
  • Applications
    Automotive

Technical Documents
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