1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IPD50N08S4-13

IPD50N08S4-13

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IPD50N08S4-13 Image

The IPD50N08S4-13 from Infineon Technologies is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 11.2 to 13.2 Mohms, Drain Source Breakdown Voltage 80 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IPD50N08S4-13 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPD50N08S4-13
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    11.2 to 13.2 Mohms
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    19 to 30 nC
  • Power Dissipation
    72 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-313
  • Applications
    Automotive

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products