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IPD50R650CE

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IPD50R650CE Image

The IPD50R650CE from Infineon Technologies is a MOSFET with Continous Drain Current 5.7 to 9 A, Drain Source Resistance 0.59 to 1.54 Mohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for IPD50R650CE can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD50R650CE
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.7 to 9 A
  • Drain Source Resistance
    0.59 to 1.54 Mohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    15 nC
  • Power Dissipation
    69 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252
  • Applications
    PFC stages, hard switching PWM stages and resonant switching stages for e.g.PC Silver box, Adapter, LCD & PDP TV and indoor lighting.

Technical Documents
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