1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IPD5N25S3-430

IPD5N25S3-430

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IPD5N25S3-430 Image

The IPD5N25S3-430 from Infineon Technologies is a MOSFET with Continous Drain Current 4 to 5 A, Drain Source Resistance 370 to 430 Mohms, Drain Source Breakdown Voltage 250 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IPD5N25S3-430 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPD5N25S3-430
  • Manufacturer
    Infineon Technologies
  • Description
    120 - 300 V, N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 to 5 A
  • Drain Source Resistance
    370 to 430 Mohms
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    4.7 to 6.2 nC
  • Power Dissipation
    41 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3
  • Applications
    Automotive

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products