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IPD60N10S4-12

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IPD60N10S4-12 Image

The IPD60N10S4-12 from Infineon Technologies is a MOSFET with Continous Drain Current 43 to 60 A, Drain Source Resistance 10.4 to 12.2 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 3.5 V. Tags: Through Hole. More details for IPD60N10S4-12 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD60N10S4-12
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    43 to 60 A
  • Drain Source Resistance
    10.4 to 12.2 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 3.5 V
  • Gate Charge
    26 to 34 nC
  • Power Dissipation
    94 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-313
  • Applications
    Automotive

Technical Documents
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