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IPD60N10S4L-12

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IPD60N10S4L-12 Image

The IPD60N10S4L-12 from Infineon Technologies is a MOSFET with Continous Drain Current 43 to 60 A, Drain Source Resistance 9.8 to 15 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1.1 to 2.1 V. Tags: Through Hole. More details for IPD60N10S4L-12 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD60N10S4L-12
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    43 to 60 A
  • Drain Source Resistance
    9.8 to 15 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1.1 to 2.1 V
  • Gate Charge
    38 to 49 nC
  • Power Dissipation
    94 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-313
  • Applications
    Automotive

Technical Documents
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