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IPD60R210PFD7S

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IPD60R210PFD7S Image

The IPD60R210PFD7S from Infineon Technologies is a MOSFET with Continous Drain Current 10 to 16 A, Drain Source Resistance 0.171 to 0.386 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPD60R210PFD7S can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD60R210PFD7S
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 to 16 A
  • Drain Source Resistance
    0.171 to 0.386 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    23 nC
  • Power Dissipation
    64 W
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3
  • Applications
    Recommended for ZV Stopologies used in high density chargers, adapters, lighting and motordrives applications, etc.

Technical Documents
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