1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IPD60R280P7S

IPD60R280P7S

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IPD60R280P7S Image

The IPD60R280P7S from Infineon Technologies is a MOSFET with Continous Drain Current 8 to 12 A, Drain Source Resistance 0.214 to 0.501 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for IPD60R280P7S can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPD60R280P7S
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 to 12 A
  • Drain Source Resistance
    0.214 to 0.501 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    18 nC
  • Power Dissipation
    53 W
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3
  • Applications
    PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silver box, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products