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IPD60R600PFD7S

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IPD60R600PFD7S Image

The IPD60R600PFD7S from Infineon Technologies is a MOSFET with Continous Drain Current 4 to 6 A, Drain Source Resistance 0.517 to 1.219 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPD60R600PFD7S can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD60R600PFD7S
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 to 6 A
  • Drain Source Resistance
    0.517 to 1.219 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    8.5 nC
  • Power Dissipation
    31 W
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3
  • Applications
    Recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power. Also suitable for PFC stage in Consumer applications and solar

Technical Documents
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