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IPD65R650CE

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IPD65R650CE Image

The IPD65R650CE from Infineon Technologies is a MOSFET with Continous Drain Current 6.4 to 10.1 A, Drain Source Resistance 0.54 to 1.40 Mohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for IPD65R650CE can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD65R650CE
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.4 to 10.1 A
  • Drain Source Resistance
    0.54 to 1.40 Mohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    23 nC
  • Power Dissipation
    86 W
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252
  • Applications
    PFC stages, hard switching PWM stages and resonant switching stages for e.g.PC Silver box, Adapter, LCD & PDP TV and indoor lighting.

Technical Documents
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