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IPD65R660CFDA

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IPD65R660CFDA Image

The IPD65R660CFDA from Infineon Technologies is a MOSFET with Continous Drain Current 3.8 to 6 A, Drain Source Resistance 0.594 to 1.54 Mohms, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPD65R660CFDA can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD65R660CFDA
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.8 to 6 A
  • Drain Source Resistance
    0.594 to 1.54 Mohms
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    20 nC
  • Power Dissipation
    62.5 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 252
  • Applications
    Automotive

Technical Documents
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