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IPD70R360P7S

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IPD70R360P7S Image

The IPD70R360P7S from Infineon Technologies is a MOSFET with Continous Drain Current 7.5 to 12.5 A, Drain Source Resistance 0.30 to 0.67 Mohm, Drain Source Breakdown Voltage 700 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for IPD70R360P7S can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD70R360P7S
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.5 to 12.5 A
  • Drain Source Resistance
    0.30 to 0.67 Mohm
  • Drain Source Breakdown Voltage
    700 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    16.4 nC
  • Power Dissipation
    59.5 W
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3

Technical Documents
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