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IPD80R600P7

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IPD80R600P7 Image

The IPD80R600P7 from Infineon Technologies is a MOSFET with Continous Drain Current 5.5 to 8 A, Drain Source Resistance 0.51 to 1.33 Mohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for IPD80R600P7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD80R600P7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.5 to 8 A
  • Drain Source Resistance
    0.51 to 1.33 Mohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    20 nC
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3
  • Applications
    Recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power. Also suitable for PFC stage in Consumer applications and solar

Technical Documents
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