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IPD90N06S4L-05

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The IPD90N06S4L-05 from Infineon Technologies is a MOSFET with Continous Drain Current 80 to 90 A, Drain Source Resistance 3.7 to 8 Mohms, Drain Source Breakdown Voltage 60 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Through Hole. More details for IPD90N06S4L-05 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPD90N06S4L-05
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 to 90 A
  • Drain Source Resistance
    3.7 to 8 Mohms
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    83 to 110 nC
  • Power Dissipation
    107 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO252-3-11
  • Applications
    Automotive

Technical Documents
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