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IPDD60R080G7

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IPDD60R080G7 Image

The IPDD60R080G7 from Infineon Technologies is a MOSFET with Continous Drain Current 19 to 29 A, Drain Source Resistance 0.069 to 0.172 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Surface Mount. More details for IPDD60R080G7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPDD60R080G7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19 to 29 A
  • Drain Source Resistance
    0.069 to 0.172 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    42 nC
  • Power Dissipation
    174 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HDSOP-10
  • Applications
    PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UP Sand Solar.

Technical Documents
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