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IPDD60R125G7

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IPDD60R125G7 Image

The IPDD60R125G7 from Infineon Technologies is a MOSFET with Continous Drain Current 12 to 20 A, Drain Source Resistance 0.108 to 0.269 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Surface Mount. More details for IPDD60R125G7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPDD60R125G7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 to 20 A
  • Drain Source Resistance
    0.108 to 0.269 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    27 nC
  • Power Dissipation
    120 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HDSOP-10
  • Applications
    PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UP Sand Solar.

Technical Documents
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