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IPDD60R190G7

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IPDD60R190G7 Image

The IPDD60R190G7 from Infineon Technologies is a MOSFET with Continous Drain Current 8 to 13 A, Drain Source Resistance 0.164 to 0.409 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Surface Mount. More details for IPDD60R190G7 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPDD60R190G7
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 to 13 A
  • Drain Source Resistance
    0.164 to 0.409 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    18 nC
  • Power Dissipation
    76 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-HDSOP-10
  • Applications
    PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UP Sand Solar.

Technical Documents
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