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IPDQ60R010S7A

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IPDQ60R010S7A Image

The IPDQ60R010S7A from Infineon Technologies is a MOSFET with Continous Drain Current 50 A, Drain Source Resistance 0.009 to 0.022 Mohms, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPDQ60R010S7A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPDQ60R010S7A
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    50 A
  • Drain Source Resistance
    0.009 to 0.022 Mohms
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    318 nC
  • Power Dissipation
    694 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-HDSOP-22
  • Applications
    Circuitbreakers(HVBatterydisconnectswitch, DCandAClowfrequency switch, HVE-fuse)anddiodeparalleling/replacementforhigh power/performance

Technical Documents
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