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IPG16N10S4-61

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IPG16N10S4-61 Image

The IPG16N10S4-61 from Infineon Technologies is a MOSFET with Continous Drain Current 11 to 16 A, Drain Source Resistance 53 to 61 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 3.5 V. Tags: Surface Mount. More details for IPG16N10S4-61 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPG16N10S4-61
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 to 16 A
  • Drain Source Resistance
    53 to 61 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 3.5 V
  • Gate Charge
    5.4 to 7 nC
  • Power Dissipation
    29 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8-4
  • Applications
    Automotive

Technical Documents
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