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IPG20N06S2L-50A

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IPG20N06S2L-50A Image

The IPG20N06S2L-50A from Infineon Technologies is a MOSFET with Continous Drain Current 16 to 20 A, Drain Source Resistance 39 to 60 Mohms, Drain Source Breakdown Voltage 55 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for IPG20N06S2L-50A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPG20N06S2L-50A
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16 to 20 A
  • Drain Source Resistance
    39 to 60 Mohms
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    13 to 17 nC
  • Power Dissipation
    51 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8-10
  • Applications
    Automotive

Technical Documents
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