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IPG20N06S2L-65A

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IPG20N06S2L-65A Image

The IPG20N06S2L-65A from Infineon Technologies is a MOSFET with Continous Drain Current 14 to 20 A, Drain Source Resistance 53 to 79 Mohms, Drain Source Breakdown Voltage 55 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for IPG20N06S2L-65A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPG20N06S2L-65A
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14 to 20 A
  • Drain Source Resistance
    53 to 79 Mohms
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    9.4 to 12 nC
  • Power Dissipation
    43 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8-10
  • Applications
    Automotive

Technical Documents
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