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IPG20N10S4L-22

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IPG20N10S4L-22 Image

The IPG20N10S4L-22 from Infineon Technologies is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 20 to 28 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1.1 to 2.1 V. Tags: Surface Mount. More details for IPG20N10S4L-22 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPG20N10S4L-22
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    20 to 28 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1.1 to 2.1 V
  • Gate Charge
    21 to 27 nC
  • Power Dissipation
    60 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8-4
  • Applications
    Automotive

Technical Documents
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