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IPG20N10S4L-35A

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IPG20N10S4L-35A Image

The IPG20N10S4L-35A from Infineon Technologies is a MOSFET with Continous Drain Current 17 to 20 A, Drain Source Resistance 29 to 45 Mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 16 V, Gate Source Threshold Voltage 1.1 to 2.1 V. Tags: Surface Mount. More details for IPG20N10S4L-35A can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPG20N10S4L-35A
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    17 to 20 A
  • Drain Source Resistance
    29 to 45 Mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    1.1 to 2.1 V
  • Gate Charge
    13.4 to 17.4 nC
  • Power Dissipation
    43 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TDSON-8-10
  • Applications
    Automotive

Technical Documents
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