The IPP100N06S2L-05 from Infineon Technologies is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 3.2 to 5.9 Mohms, Drain Source Breakdown Voltage 55 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Through Hole. More details for IPP100N06S2L-05 can be seen below.