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IPP17N25S3-100

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IPP17N25S3-100 Image

The IPP17N25S3-100 from Infineon Technologies is a MOSFET with Continous Drain Current 13.3 to 17 A, Drain Source Resistance 85 to 100 Mhms, Drain Source Breakdown Voltage 250 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IPP17N25S3-100 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPP17N25S3-100
  • Manufacturer
    Infineon Technologies
  • Description
    120 - 300 V, N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13.3 to 17 A
  • Drain Source Resistance
    85 to 100 Mhms
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    14 to 19 nC
  • Power Dissipation
    107 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO220-3-1
  • Applications
    Automotive

Technical Documents
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