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IPW60R045CPA

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IPW60R045CPA Image

The IPW60R045CPA from Infineon Technologies is a MOSFET with Continous Drain Current 38 to 60 A, Drain Source Resistance 0.04 to 0.110 Mohms, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for IPW60R045CPA can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPW60R045CPA
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    38 to 60 A
  • Drain Source Resistance
    0.04 to 0.110 Mohms
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    150 to 190 nC
  • Power Dissipation
    431 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO247-3
  • Applications
    Automotive

Technical Documents
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