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IPW65R080CFDA

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The IPW65R080CFDA from Infineon Technologies is a MOSFET with Continous Drain Current 27.4 to 43.3 A, Drain Source Resistance 0.072 to 0.190 Mohms, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPW65R080CFDA can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPW65R080CFDA
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    27.4 to 43.3 A
  • Drain Source Resistance
    0.072 to 0.190 Mohms
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    161 nC
  • Power Dissipation
    391 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO247
  • Applications
    Automotive

Technical Documents
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