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IPW65R110CFDA

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IPW65R110CFDA Image

The IPW65R110CFDA from Infineon Technologies is a MOSFET with Continous Drain Current 19.7 to 31.2 A, Drain Source Resistance 0.099 to 0.257 Mohms, Drain Source Breakdown Voltage 650 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 3.5 to 4.5 V. Tags: Through Hole. More details for IPW65R110CFDA can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPW65R110CFDA
  • Manufacturer
    Infineon Technologies
  • Description
    600-800 V, N-Channel Automotive MOSFET

General

  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19.7 to 31.2 A
  • Drain Source Resistance
    0.099 to 0.257 Mohms
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    3.5 to 4.5 V
  • Gate Charge
    118 nC
  • Power Dissipation
    277.8 W
  • Temperature operating range
    -40 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO247
  • Applications
    Automotive

Technical Documents
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