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IQE006NE2LM5

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The IQE006NE2LM5 from Infineon Technologies is a MOSFET with Continous Drain Current 41 to 298 A, Drain Source Resistance 0.5 to 0.8 milli-ohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1.3 to 2 V. Tags: Surface Mount. More details for IQE006NE2LM5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IQE006NE2LM5
  • Manufacturer
    Infineon Technologies
  • Description
    25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    41 to 298 A
  • Drain Source Resistance
    0.5 to 0.8 milli-ohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1.3 to 2 V
  • Gate Charge
    28.5 to 82.1 nC
  • Power Dissipation
    2.1 to 89 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TSON-8-4
  • Applications
    Drives, Telecom, SMPS, Server, Oring

Technical Documents
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