IRF7380PbF

Note : Your request will be directed to Infineon Technologies.

IRF7380PbF Image

The IRF7380PbF from Infineon Technologies is a MOSFET with Continous Drain Current 3.6 A, Drain Source Resistance 61 to 73 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for IRF7380PbF can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRF7380PbF
  • Manufacturer
    Infineon Technologies
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.6 A
  • Drain Source Resistance
    61 to 73 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    15 to 23 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO8
  • Applications
    High frequency DC-DC converters, Lead-Free

Technical Documents

Latest MOSFETs

View more products