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IRF7530PbF

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IRF7530PbF Image

The IRF7530PbF from Infineon Technologies is a MOSFET with Continous Drain Current 5.4 A, Drain Source Resistance 30 to 45 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.2 V. Tags: Surface Mount. More details for IRF7530PbF can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF7530PbF
  • Manufacturer
    Infineon Technologies
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.4 A
  • Drain Source Resistance
    30 to 45 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.2 V
  • Gate Charge
    18 to 26 nC
  • Power Dissipation
    1.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO8

Technical Documents
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