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IRHG6110

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IRHG6110 Image

The IRHG6110 from Infineon Technologies is a MOSFET with Continous Drain Current -0.75 to 1 A, Drain Source Resistance 600 to 1200 milliohm, Drain Source Breakdown Voltage -100 to 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to 4 V. Tags: Through Hole. More details for IRHG6110 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHG6110
  • Manufacturer
    Infineon Technologies
  • Description
    -100 to 100 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Quad
  • Continous Drain Current
    -0.75 to 1 A
  • Drain Source Resistance
    600 to 1200 milliohm
  • Drain Source Breakdown Voltage
    -100 to 100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to 4 V
  • Gate Charge
    15 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Through Hole
  • Package
    MO-036AB

Technical Documents
View details on the manufacturer's website
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