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IRHLG77110

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IRHLG77110 Image

The IRHLG77110 from Infineon Technologies is a MOSFET with Continous Drain Current 1.8 A, Drain Source Resistance 285 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Through Hole. More details for IRHLG77110 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHLG77110
  • Manufacturer
    Infineon Technologies
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Quad
  • Continous Drain Current
    1.8 A
  • Drain Source Resistance
    285 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    11 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Through Hole
  • Package
    MO-036AB

Technical Documents
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