1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IRHLG7S7110

IRHLG7S7110

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IRHLG7S7110 Image

The IRHLG7S7110 from Infineon Technologies is a MOSFET with Continous Drain Current 1.8 A, Drain Source Resistance 330 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Through Hole. More details for IRHLG7S7110 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRHLG7S7110
  • Manufacturer
    Infineon Technologies
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Quad
  • Continous Drain Current
    1.8 A
  • Drain Source Resistance
    330 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    11 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Through Hole
  • Package
    MO-036AB

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products