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IRHLUBC7970Z4

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IRHLUBC7970Z4 Image

The IRHLUBC7970Z4 from Infineon Technologies is a MOSFET with Continous Drain Current -0.53 A, Drain Source Resistance 1400 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -2 to -1 V. Tags: Surface Mount. More details for IRHLUBC7970Z4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHLUBC7970Z4
  • Manufacturer
    Infineon Technologies
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.53 A
  • Drain Source Resistance
    1400 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -2 to -1 V
  • Gate Charge
    3.6 nC
  • Power Dissipation
    0.57 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    UBC

Technical Documents
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