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IRHM57260SE

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The IRHM57260SE from Infineon Technologies is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 49 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for IRHM57260SE can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHM57260SE
  • Manufacturer
    Infineon Technologies
  • Description
    200 V, 165 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    49 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    165 nC
  • Power Dissipation
    208 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Through Hole
  • Package
    TO-254AA

Technical Documents
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