1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IRHMB67260

IRHMB67260

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IRHMB67260 Image

The IRHMB67260 from Infineon Technologies is a MOSFET with Continous Drain Current 45 A, Drain Source Resistance 29 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRHMB67260 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRHMB67260
  • Manufacturer
    Infineon Technologies
  • Description
    200 V, 240 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    45 A
  • Drain Source Resistance
    29 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    240 nC
  • Power Dissipation
    208 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Through Hole
  • Package
    TO-254AA Tabless Low Ohmic

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products