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IRHMJ57160

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The IRHMJ57160 from Infineon Technologies is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 18 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for IRHMJ57160 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHMJ57160
  • Manufacturer
    Infineon Technologies
  • Description
    100 V, 160 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    18 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    160 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    TO-254AA Tabless SMD

Technical Documents
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