1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IRHN9250

IRHN9250

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IRHN9250 Image

The IRHN9250 from Infineon Technologies is a MOSFET with Continous Drain Current -14 A, Drain Source Resistance 330 Milliohm, Drain Source Breakdown Voltage -200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for IRHN9250 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRHN9250
  • Manufacturer
    Infineon Technologies
  • Description
    -200 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -14 A
  • Drain Source Resistance
    330 Milliohm
  • Drain Source Breakdown Voltage
    -200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    200 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    SMD-1

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products