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IRHNJ57133SE

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The IRHNJ57133SE from Infineon Technologies is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 80 milliohm, Drain Source Breakdown Voltage 130 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for IRHNJ57133SE can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHNJ57133SE
  • Manufacturer
    Infineon Technologies
  • Description
    130 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    80 milliohm
  • Drain Source Breakdown Voltage
    130 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    48 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    SMD-0.5

Technical Documents
View details on the manufacturer's website
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