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IRHNJ67C30

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The IRHNJ67C30 from Infineon Technologies is a MOSFET with Continous Drain Current 3.4 A, Drain Source Resistance 3100 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for IRHNJ67C30 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHNJ67C30
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, 52 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.4 A
  • Drain Source Resistance
    3100 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    52 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    SMD-0.5

Technical Documents
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