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IRHNJ7430SE

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The IRHNJ7430SE from Infineon Technologies is a MOSFET with Continous Drain Current 4.4 A, Drain Source Resistance 1770 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for IRHNJ7430SE can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHNJ7430SE
  • Manufacturer
    Infineon Technologies
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.4 A
  • Drain Source Resistance
    1770 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    30 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    SMD-0.5
  • Applications
    DC-DC converter, Motor drives, Ion thrusters

Technical Documents
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