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IRHNM57214SE

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IRHNM57214SE Image

The IRHNM57214SE from Infineon Technologies is a MOSFET with Continous Drain Current 3.7 A, Drain Source Resistance 1700 Milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for IRHNM57214SE can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHNM57214SE
  • Manufacturer
    Infineon Technologies
  • Description
    250 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.7 A
  • Drain Source Resistance
    1700 Milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    9.1 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    SMD-0.2

Technical Documents
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