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IRHNM597110

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IRHNM597110 Image

The IRHNM597110 from Infineon Technologies is a MOSFET with Continous Drain Current -3.1 A, Drain Source Resistance 1200 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for IRHNM597110 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHNM597110
  • Manufacturer
    Infineon Technologies
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.1 A
  • Drain Source Resistance
    1200 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    11 nC
  • Power Dissipation
    23 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    SMD-0.2

Technical Documents
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