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IRHYB67134CM

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IRHYB67134CM Image

The IRHYB67134CM from Infineon Technologies is a MOSFET with Continous Drain Current 19 A, Drain Source Resistance 90 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRHYB67134CM can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHYB67134CM
  • Manufacturer
    Infineon Technologies
  • Description
    150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    19 A
  • Drain Source Resistance
    90 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    50 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Through Hole
  • Package
    TO-257AA Tabless Low Ohmic

Technical Documents
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