The ISK057N04LM6 from Infineon Technologies is an N-Channel Logic Level MOSFET that has been optimized to offer high performance and power density in a compact package. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of 1.8 V, and a drain-source on-resistance of less than 5.75 milli-ohms. This MOSFET has a continuous drain current of up to 64 A and a power dissipation of less than 39.1 W. It provides superior thermal resistance along with the lowest on-state resistance and is fully qualified according to JEDEC standards. This RoHS-compliant power MOSFET is available in a surface-mount package that measures 2.10 x 2.10 mm and is ideal for industrial applications.