IQAA31SC120D1

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The IQAA31SC120D1 from iQXPRZ Power is a MOSFET with Continous Drain Current 31 A, Drain Source Resistance 0.098 ohm, Drain Source Breakdown Voltage 1200 V, Gate Charge 49.2 nC, Switching Speed 27 ns. More details for IQAA31SC120D1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IQAA31SC120D1
  • Manufacturer
    iQXPRZ Power
  • Description
    1200 V, 31 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    31 A
  • Drain Source Resistance
    0.098 ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Charge
    49.2 nC
  • Switching Speed
    27 ns
  • Industry
    Industrial, Commercial

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